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Journal Articles

Thermal stability of deep-level defects in high-purity semi-insulating 4H-SiC substrate studied by admittance spectroscopy

Iwamoto, Naoya*; Azarov, A.*; Oshima, Takeshi; Moe, A. M. M.*; Svensson, B. G.*

Materials Science Forum, 858, p.357 - 360, 2016/05

https://doi.org/10.4028/www.scientific.net/MSF.858.357

Journal Articles

Observation of deep levels and their hole capture behavior in p-type 4H-SiC epilayers with and without electron irradiation

Kato, Masashi*; Yoshihara, Kazuki*; Ichimura, Masaya*; Hatayama, Tomoaki*; Oshima, Takeshi

Japanese Journal of Applied Physics, 53(4S), p.04EP09_1 - 04EP09_5, 2014/04

https://doi.org/10.7567/JJAP.53.04EP09
 Times Cited Count：6 Percentile：26.85(Physics, Applied)

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